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| N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - MARCH 94 FEATURES * 60 Volt VDS * RDS(on)=2 ZVN2106A D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j :T stg VALUE 60 450 8 20 700 -55 to +150 UNIT V mA A V mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) SYMBOL MIN. BV DSS V GS(th) I GSS I DSS 60 0.8 2.4 20 500 100 2 2 300 75 45 20 MAX. UNIT CONDITIONS. V V nA nA A A mS pF pF pF V DS=18 V, V GS=0V, f=1MHz I D=1mA, V GS=0V ID=1mA, V DS= V GS V GS= 20V, V DS=0V V DS=60 V, V GS=0 V DS=48 V, V GS=0V, T=125C(2) V DS=18V, V GS=10V V GS=10V,I D=1A V DS=18V,I D=1A I D(on) R DS(on) g fs C iss C oss C rss 3-361 ZVN2106A TYPICAL CHARACTERISTICS ID(On) -On-State Drain Current (Amps) 4 VDS-Drain Source Voltage (Volts) VGS= 10V 9V 8V 7V 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 2 4 6 8 10 0.5A 0.25A ID= 1A 3 2 6V 5V 4V 1 0 0 1 2 3 4 5 3V VDS - Drain Source Voltage (Volts) VGS-Gate Source Voltage (Volts) Saturation Characteristics RDS(ON) -Drain Source On-Resistance () Voltage Saturation Characteristics ID(On)-On-State Drain Current (Amps) 4 VDS= 10V 10 3 2 1 ID= 1A 0.5A 0.25A 1 0 0 1 2 3 4 5 6 7 8 9 10 0.1 1 2 3 4 5 6 7 8 9 10 20 VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts) Transfer Characteristics On-resistance v gate-source voltage 2.4 0.7 Normalised RDS(on) and VGS(th) 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -80 -60 -40 -20 ain Dr ce an ist es R VGS=10V ce ID=1A ur So VGS=VDS ID=1mA gfs-Transconductance (S) ) on S( RD 0.6 0.5 0.4 0.3 0.2 0.1 0 0 1 2 3 4 5 VDS=10V Gate Thresh old Voltage VG S(t h) 0 20 40 60 80 100 120 140 160 Tj-Junction Temperature (C) ID- Drain Current (Amps) Normalised RDS(on) and VGS(th) vs Temperature Transconductance v drain current 3-362 ZVN2106A TYPICAL CHARACTERISTICS 0.7 100 0.6 gfs-Transconductance (S) 0.5 0.4 0.3 0.2 0.1 0 0 2 4 6 8 10 VDS=10V C-Capacitance (pF) 80 60 Ciss 40 20 Coss Crss 0 10 20 30 40 50 VGS-Gate Source Voltage (Volts) VDS-Drain Source Voltage (Volts) Transconductance v gate-source voltage VDD= 20V 30V 50V ID=3A Capacitance v drain-source voltage 16 VGS-Gate Source Voltage (Volts) 14 12 10 8 6 4 2 0 0 0.5 1.0 1.5 2.0 2.5 3.0 Q-Charge (nC) Gate charge v gate-source voltage 3-363 |
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